意法半导体FD-SOI技术配备Memoir嵌入式存储器

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比较：体校晶体管和FD-SOI晶体管

元器件交易网讯 11月7日消息，据外媒 Electronicsweekly报道，Memoir Systems宣布已采用其算法内存技术为意法半导体独有的 FD-SOI（Fully Depleted Silicon-on-Insulator，全耗尽绝缘体上硅）技术，配备嵌入式存储器。

意法半导体负责设计支持和服务的副总裁Philippe Magarshack说：“就FD-SOI本身而言，FD-SOI配备了ASIC和SoC设计工具，从而实现最优性能的同时确保温度不超过安全限制。而且较传统制造技术，FD-SOI技术可在大幅提升性能的同时大幅降低功耗，因此ST-Ericsson选择采用意法半导体的FD-SOI技术设计未来的移动平台。“

Memoir Systems作为第三方知识产权进一步表示：“我们正在让FD-SOI更具吸引力，并演示其简单的移动特点。“

意法半导体ST将是FD-SOI技术的第一个半导体供应商。作为其独有的FD-SOI技术为意法半导体制造28纳米和20纳米芯片。同时，FD-SOI是一种扩展和简化现有平面、体硅制造方法的新技术。而FD-SOI晶体管相比同等采用传统CMOS工艺的晶体管，拥有更高的制造过程工作频率，这源于FD-SOI技术提高了晶体管的静电特性、缩短了沟道长度。

Memoir首席执行官Sundar Iyer说：“内存技术的不断突破缩短了设计时间，也提高了设计性能，这使我们的算法内存技术有能力内嵌入FD-SOI晶体管，这对于我们来说是一种承诺，这对我们和我们的客户都是很重要的。期待FD-SOI技术更高性能突破，以实现更低工作功耗和更低待机功耗。”(元器件交易网龙燕 译)

外媒原文：

Memoir Systems provide embedded memory for FD-SOI ASICs

Memoir Systems has made its Algorithmic Memory Technology available for embedded memories in STMicroelectronics’ fully-depleted silicon-on-insulator (FD-SOI) Asics.

“On its own, FD-SOI produces ASICs and SoCs that run faster and cooler than devices built from alternative process technologies,” says ST evp Philippe Magarshack, “in adding third-party intellectual property from Memoir Systems, we are making FD-SOI more appealing and demonstrating how simple porting is.”

ST is the first semiconductor supplier to make FD-SOI available as a technology that extends and simplifies existing planar, bulk-silicon manufacturing approaches.

An FD-SOI transistor operates at higher frequencies than equivalent transistor manufactured using bulk CMOS because of improved transistor electrostatic characteristics and a shorter channel length.

“With our commitment to breakthrough memory technology, accelerated design times, and extreme high-performance, making our Algorithmic Memory Technology available on FD-SOI was important to us and our customers,” says Memoir CEO Sundar Iyer (pictured), “the ease of porting, together with the performance we’ve seen, confirms that FD-SOI is faster, cooler, and simpler.”